Silicon Carbide (SiC)
SiC Diffusion Bonded Plate
| Product Name | SiC Diffusion Bonding |
|---|---|
| Material | Silicon Carbide (SiC) |
| Outer Diameter | φ180 |
| Thickness | t19.6 (t9.8＋t9.8) |
| Internal Flow Channels | Width 6.6mm, Depth 1mm |
| Side Holes穴 | □2 |
| Process |
A two layer bonded plate made of SiC, which has high thermal conductivity, insulation property, heat resistance, and stiffness.
The bottom plate is precisely machined with channels and microgrooves. By bonding two plates together, it becomes possible to create internal channels and complex design that has been considered impossible through conventional cutting methods. |